Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor
Identifieur interne : 005726 ( Main/Repository ); précédent : 005725; suivant : 005727Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor
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Abstract
SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor</title><author><name sortKey="Sood, Ashok K" uniqKey="Sood A">Ashok K. Sood</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1><s2>Woburn, MA 01801</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Woburn, MA 01801</wicri:noRegion></affiliation></author><author><name sortKey="Richwine, Robert A" uniqKey="Richwine R">Robert A. Richwine</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1><s2>Woburn, MA 01801</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Woburn, MA 01801</wicri:noRegion></affiliation></author><author><name sortKey="Puri, Yash R" uniqKey="Puri Y">Yash R. Puri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1><s2>Woburn, MA 01801</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Woburn, MA 01801</wicri:noRegion></affiliation></author><author><name sortKey="Dilello, Nicole" uniqKey="Dilello N">Nicole Dilello</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Microsystems Technology Laboratories, MIT</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Hoyt, Judy L" uniqKey="Hoyt J">Judy L. Hoyt</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Microsystems Technology Laboratories, MIT</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Akinwande, Tayo I" uniqKey="Akinwande T">Tayo I. Akinwande</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Microsystems Technology Laboratories, MIT</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Michigan</region></placeName></affiliation></author><author><name sortKey="Horn, Stuart" uniqKey="Horn S">Stuart Horn</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>DARPA/MTO, 3701, North Fairfax Drive</s1><s2>Arlington, VA 22203</s2><s3>USA</s3><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Arlington, VA 22203</wicri:noRegion></affiliation></author><author><name sortKey="Balcerak, Raymond S" uniqKey="Balcerak R">Raymond S. Balcerak</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ray M. Balcerak, LLC</s1><s2>VA 22203</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Virginie</region></placeName></affiliation></author><author><name sortKey="Bulman, Gary" uniqKey="Bulman G">Gary Bulman</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>RTI International, 3040 Cornwallis Road</s1><s2>Research Triangle Park, NC 27709</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Research Triangle Park, NC 27709</wicri:noRegion></affiliation></author><author><name sortKey="Venkatasubramanian, Rama" uniqKey="Venkatasubramanian R">Rama Venkatasubramanian</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>RTI International, 3040 Cornwallis Road</s1><s2>Research Triangle Park, NC 27709</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Research Triangle Park, NC 27709</wicri:noRegion></affiliation></author><author><name sortKey="D Souza, Arvind I" uniqKey="D Souza A">Arvind I. D Souza</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>DRS Sensors and Targeting Systems, 10600 Valley View St.</s1><s2>Cypress, CA 90630</s2><s3>USA</s3><sZ>11 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Cypress, CA 90630</wicri:noRegion></affiliation></author><author><name sortKey="Bramhall, Thomas G" uniqKey="Bramhall T">Thomas G. Bramhall</name><affiliation wicri:level="1"><inist:fA14 i1="07"><s1>DARPA Programs Office, US Army, AMSRD</s1><s2>Redstone Arsenal, AL 35898</s2><s3>USA</s3><sZ>12 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Redstone Arsenal, AL 35898</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0484836</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0484836 INIST</idno><idno type="RBID">Pascal:09-0484836</idno><idno type="wicri:Area/Main/Corpus">004D19</idno><idno type="wicri:Area/Main/Repository">005726</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dectector arrays</term><term>Experimental study</term><term>Focal plane arrays</term><term>Gallium Arsenides</term><term>Imagery</term><term>Indium Arsenides</term><term>Manufacturing processes</term><term>Sensor materials</term><term>Signal processing</term><term>Silicon</term><term>Superlattices</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement signal</term><term>Matrice détecteur</term><term>Matrice plan focal</term><term>Imagerie</term><term>Etude expérimentale</term><term>Procédé fabrication</term><term>Superréseau</term><term>Composé ternaire</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Matériau capteur</term><term>Silicium</term><term>As Ga In</term><term>InGaAs</term><term>HgCdTe</term><term>0130C</term><term>0757K</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7298</s2></fA05><fA06><s3>p. 2</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Infrared technology and applications XXXV : 13-17 April 2009, Orlando, Florida, United States</s1></fA09><fA11 i1="01" i2="1"><s1>SOOD (Ashok K.)</s1></fA11><fA11 i1="02" i2="1"><s1>RICHWINE (Robert A.)</s1></fA11><fA11 i1="03" i2="1"><s1>PURI (Yash R.)</s1></fA11><fA11 i1="04" i2="1"><s1>DILELLO (Nicole)</s1></fA11><fA11 i1="05" i2="1"><s1>HOYT (Judy L.)</s1></fA11><fA11 i1="06" i2="1"><s1>AKINWANDE (Tayo I.)</s1></fA11><fA11 i1="07" i2="1"><s1>HORN (Stuart)</s1></fA11><fA11 i1="08" i2="1"><s1>BALCERAK (Raymond S.)</s1></fA11><fA11 i1="09" i2="1"><s1>BULMAN (Gary)</s1></fA11><fA11 i1="10" i2="1"><s1>VENKATASUBRAMANIAN (Rama)</s1></fA11><fA11 i1="11" i2="1"><s1>D'SOUZA (Arvind I.)</s1></fA11><fA11 i1="12" i2="1"><s1>BRAMHALL (Thomas G.)</s1></fA11><fA12 i1="01" i2="1"><s1>ANDRESEN (Björn F.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>FULOP (Gabor F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>NORTON (Paul R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1><s2>Woburn, MA 01801</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Microsystems Technology Laboratories, MIT</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>DARPA/MTO, 3701, North Fairfax Drive</s1><s2>Arlington, VA 22203</s2><s3>USA</s3><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Ray M. Balcerak, LLC</s1><s2>VA 22203</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>RTI International, 3040 Cornwallis Road</s1><s2>Research Triangle Park, NC 27709</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="06"><s1>DRS Sensors and Targeting Systems, 10600 Valley View St.</s1><s2>Cypress, CA 90630</s2><s3>USA</s3><sZ>11 aut.</sZ></fA14><fA14 i1="07"><s1>DARPA Programs Office, US Army, AMSRD</s1><s2>Redstone Arsenal, AL 35898</s2><s3>USA</s3><sZ>12 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>72983D.1-72983D.11</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-7564-0</s0></fA26><fA26 i1="02"><s0>0-8194-7564-5</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172984651160</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0484836</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. 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